Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/35910
Title: High Q Dielectric Titanium Tellurite Thick Films on Alumina Substrates for High Frequency Telecommunications
Author: Su, Xinming
Tkach, Alexander
Krupka, Jerzy
Vilarinho, Paula M.
Keywords: TiTe3O8 thick films
Electrophoretic deposition
Alumina substrates
High-Q dielectrics
Microwave properties
Issue Date: 8-Jan-2022
Publisher: MDPI
Abstract: The vital role of high-quality-factor (Q) high-frequency (f) dielectric resonators in the growing microwave telecommunication, satellite broadcasting and intelligent transport systems has long motivated the search for new, small size, and lightweight integrated components and packages, prepared by low cost and sustainable processes. One approach is replacing the currently used bulk ceramic dielectrics by thick films of low-sintering-temperature dielectrics fabricated by affordable processes. Here we demonstrate the fabrication of high-Q TiTe3O8 thick films directly on low loss Al2O3 substrates by electrophoretic deposition using sacrificial carbon layer. Nineteen-micrometre-thick TiTe3O8 films on Al2O3 sintered at 700 °C are found to have a relative permittivity εr of 32 and Q × f > 21,000 GHz. Being thus able to measure and provide for the first time the microwave dielectric properties of these films, our results suggest that TiTe3O8 films on Al2O3 substrates are suitable for microlayer microstrip array applications.
Peer review: yes
URI: http://hdl.handle.net/10773/35910
DOI: 10.3390/ma15020467
ISSN: 1996-1944
Publisher Version: https://www.mdpi.com/1996-1944/15/2/467
Appears in Collections:CICECO - Artigos
DEMaC - Artigos

Files in This Item:
File Description SizeFormat 
Mat15(2022)0467-Su.pdf8.64 MBAdobe PDFView/Open


FacebookTwitterLinkedIn
Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.