Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/30564
Title: Optical lithography patterning of SiO2 layers for interface passivation of thin film solar cells
Author: Bose, Sourav
Cunha, José M. V.
Suresh, Sunil
Wild, Jessica de
Lopes, Tomás S.
Barbosa, João R. S.
Silva, Ricardo
Borme, Jérôme
Fernandes, Paulo A.
Vermang, Bart
Salomé, Pedro M. P.
Keywords: Thin film solar cells
Cu(In,Ga)Se2 (CIGS)
Defects passivation
Semiconductors
Optoelectronics
Issue Date: Dec-2018
Publisher: Wiley
Abstract: Ultrathin Cu(In,Ga)Se2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. In this work, we develop an optical lithography process that can produce sub-micrometer contacts in a SiO2 passivation layer at the CIGS rear contact. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.
Peer review: yes
URI: http://hdl.handle.net/10773/30564
DOI: 10.1002/solr.201800212
ISSN: 2367-198X
Appears in Collections:DFis - Artigos
I3N-FSCOSD - Artigos

Files in This Item:
File Description SizeFormat 
Salome 2018-08-20_trenches.pdf1.08 MBAdobe PDFView/Open


FacebookTwitterLinkedIn
Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.