Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/30545
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dc.contributor.authorAlberto, H. V.pt_PT
dc.contributor.authorVilão, R. C.pt_PT
dc.contributor.authorVieira, R. B. L.pt_PT
dc.contributor.authorGil, J. M.pt_PT
dc.contributor.authorWeidinger, A.pt_PT
dc.contributor.authorSousa, M. G.pt_PT
dc.contributor.authorTeixeira, J. P.pt_PT
dc.contributor.authorCunha, A. F. dapt_PT
dc.contributor.authorLeitão, J. P.pt_PT
dc.contributor.authorSalomé, P. M. P.pt_PT
dc.contributor.authorFernandes, P. A.pt_PT
dc.contributor.authorTörndahl, T.pt_PT
dc.contributor.authorProkscha, T.pt_PT
dc.contributor.authorSuter, A.pt_PT
dc.contributor.authorSalman, Z.pt_PT
dc.date.accessioned2021-02-09T18:17:09Z-
dc.date.available2021-02-09T18:17:09Z-
dc.date.issued2018-02-
dc.identifier.issn2475-9953pt_PT
dc.identifier.urihttp://hdl.handle.net/10773/30545-
dc.description.abstractThin films and p-n junctions for solar cells based on the absorber materials Cu(In,Ga)Se2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu+ state at the heterojunction interface as well as at the surface of the Cu(In,Ga)Se2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomic-like configuration to a anion bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar cell electrical performance and additional information can be used for further optimizations of the surface.pt_PT
dc.language.isoengpt_PT
dc.publisherAmerican Physical Societypt_PT
dc.relationinfo:eu-repo/grantAgreement/FCT/5876-PPCDTI/102722/PTpt_PT
dc.relationUID/FIS/04564/2016pt_PT
dc.rightsopenAccesspt_PT
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/pt_PT
dc.titleSlow-muon study of quaternary solar-cell materials: single layers and p−n junctionspt_PT
dc.typearticlept_PT
dc.description.versionpublishedpt_PT
dc.peerreviewedyespt_PT
degois.publication.issue2pt_PT
degois.publication.titlePhysical Review Materialspt_PT
degois.publication.volume2pt_PT
dc.identifier.doi10.1103/PhysRevMaterials.2.025402pt_PT
dc.identifier.essn2475-9953pt_PT
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