Please use this identifier to cite or link to this item:
Title: Effects of geometry parameters of NTFET devices on the I-V measurements
Author: Justino, Celine I. L.
Rocha-Santos, Teresa A. P.
Amaral, José P.
Cardoso, Susana
Duarte, Armando C.
Keywords: Field-effect transistors
Microfabrication process
Single-walled carbon nanotubes
Issue Date: 2013
Publisher: Elsevier
Abstract: In this work, we report the design and fabrication of field effect transistors based on single-walled carbon nanotubes (NTFETs) with the study of different geometry parameters (distance between electrodes, number of electrodes and thickness of gold layer) on the device performance, i.e., through the extraction of resistance from the output characteristics (I-V measurements) of the fabricated NTFET devices. Therefore, the NTFET device type with lower resistance was selected (based on the study of different geometry parameters) due to its enhanced device performance and thus being preferable for possible sensing experiments.
Peer review: yes
DOI: 10.1016/j.sse.2012.12.013
ISSN: 0038-1101
Appears in Collections:CESAM - Artigos
DQ - Artigos

Files in This Item:
File Description SizeFormat 
Justino et al. - 2013 - Effects of geometry parameters of NTFET devices on.pdf228.36 kBAdobe PDFrestrictedAccess

Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.