Please use this identifier to cite or link to this item:
|Title:||Effects of geometry parameters of NTFET devices on the I-V measurements|
|Author:||Justino, Celine I. L.|
Rocha-Santos, Teresa A. P.
Amaral, José P.
Duarte, Armando C.
Single-walled carbon nanotubes
|Abstract:||In this work, we report the design and fabrication of field effect transistors based on single-walled carbon nanotubes (NTFETs) with the study of different geometry parameters (distance between electrodes, number of electrodes and thickness of gold layer) on the device performance, i.e., through the extraction of resistance from the output characteristics (I-V measurements) of the fabricated NTFET devices. Therefore, the NTFET device type with lower resistance was selected (based on the study of different geometry parameters) due to its enhanced device performance and thus being preferable for possible sensing experiments.|
|Appears in Collections:||CESAM - Artigos|
DQ - Artigos
Files in This Item:
|Justino et al. - 2013 - Effects of geometry parameters of NTFET devices on.pdf||228.36 kB||Adobe PDF|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.