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|Title:||Synthesis and characterization of Bi-1 (-) xNdxFeO3 thin films deposited using a high throughput physical vapour deposition technique|
|Author:||Darby, M. S. B.|
Karpinsky, D. V.
Kholkin, A. L.
Hayden, B. E.
Reaney, I. M.
|Publisher:||ELSEVIER SCIENCE SA|
|Abstract:||The high throughput synthesis of BiFeO3 and rare earth doped BiFeO3 films using a modified molecular beam epitaxy technique is reported. Optimum conditions for deposition have been established and compositionally graded Bi(1- x)NdxFeO3 (x = 0.08 to 0.24) thin films have been fabricated on platinised silicon substrate (Si/ SiO2/TiO2/Pt) with the aim of finding the optimum Nd dopant concentrations for enhanced piezoelectric properties. For x<0.12, the structure and symmetry were identical to that of the R3c BiFeO3 end member. For x > 0.20, the structure and symmetry were consistent with the NdFeO3 end member (Pnma). For compositions 0.12 < x < 0.2, a gradual transition from R3c to Pnma was observed via a mixed phase region but no compositional interval could be unambiguously identified in which the intermediate PbZrO3-like structure, reported by Karimi et al. (2009) , existed as a single phase. Piezoresponse force microscopy remanent hysteresis measurements of the film revealed a statistical increase in the piezoelectric response at x approximate to 0.11 within the R3c region adjacent to the mixed phase field. (c) 2012 Elsevier B.V. All rights reserved.|
|Appears in Collections:||CICECO - Artigos|
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|Synthesis and characterization of Bi-1 (-) xNdxFeO3 thin films deposited using a high throughput physical vapour deposition technique_10.1016j.tsf.2012.12.012.pdf||1.05 MB||Adobe PDF|
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