Please use this identifier to cite or link to this item:
Title: Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates
Author: Pereira, M. J.
Lourenco, A. A. C. S.
Amaral, V. S.
Issue Date: 2014
Publisher: E D P SCIENCES
Abstract: Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 degrees C). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.
Peer review: yes
DOI: 10.1051/epjconf/20147503006
ISSN: 2100-014X
Publisher Version: 10.1051/epjconf/20147503006
Appears in Collections:CICECO - Artigos

Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.