Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/20433
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dc.contributor.authorOkhay, Olenapt
dc.contributor.authorGoncalves, Gilpt
dc.contributor.authorTkach, Alexanderpt
dc.contributor.authorDias, Catarinapt
dc.contributor.authorVentura, Joaopt
dc.contributor.authorRibeiro da Silva, Manuel Fernandopt
dc.contributor.authorValente Goncalves, Luis Miguelpt
dc.contributor.authorTitus, Elbypt
dc.date.accessioned2017-12-07T19:46:57Z-
dc.date.available2017-12-07T19:46:57Z-
dc.date.issued2016pt
dc.identifier.issn0021-8979pt
dc.identifier.urihttp://hdl.handle.net/10773/20433-
dc.description.abstractWe report fabrication of reduced graphene oxide (rGO) films using chemical reduction by hydrazine hydrate and rGO paper-like samples using low temperature treatment reduction. Structural analysis confirms the formation of the rGO structure for both samples. Current-voltage (I-V) measurements of the rGO film reveal semiconductor behavior with the maximum current value of similar to 3 x 10(-4) A. The current for the rGO paper sample is found to be, at least, one order of magnitude higher. Moreover, bipolar resistance switching, corresponding to memristive behavior of type II, is observed in the I-V data of the rGO paper. Although precise values of the rGO film conductivity and the Seebeck coefficient could not be measured, rGO paper shows an electrical conductivity of 6.7 x 10(2)S/m and Seebeck coefficient of -6 mu V/degrees C. Thus, we demonstrate a simplified way for the fabrication of rGO paper that possesses better and easier measurable macroscopic electrical properties than that of rGO thin film. Published by AIP Publishing.pt
dc.language.isoengpt
dc.publisherAMER INST PHYSICSpt
dc.relationinfo:eu-repo/grantAgreement/FCT/5876/147332/PTpt
dc.rightsopenAccesspor
dc.subjectCHEMICAL-REDUCTIONpt
dc.subjectNANOCOMPOSITESpt
dc.subjectNANOSHEETSpt
dc.subjectGRAPHITEpt
dc.titleThin film versus paper-like reduced graphene oxide: Comparative study of structural, electrical, and thermoelectrical propertiespt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.issue5pt
degois.publication.titleJOURNAL OF APPLIED PHYSICSpt
degois.publication.volume120pt
dc.relation.publisherversion10.1063/1.4958956pt
dc.identifier.doi10.1063/1.4958956pt
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