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Title: High-pressure induced phase formation in the CuGaS2-CuGaO2 chalcopyrite-delafossite system
Author: Salak, Andrei N.
Zhaludkevich, Aleksandr L.
Ignatenko, Oleg V.
Lisenkov, Aleksey D.
Yaremchenko, Aleksey A.
Zheludkevich, Mikhail L.
Ferreira, Mario G. S.
Issue Date: 2014
Abstract: Phase formation under high pressure int he chalcopyrite-delafossite system has been studied at 5 GPa and 500-1000 degrees C. The parent chalcopyrite composition used in this study was slightly Cu-deficient, corresponding to the chemical formula (Cu,Ga)(0.905)GaS2. It was revealed that under high-pressure and high-temperature conditions, a mixture of the parent phases partly decomposes to form Cu2S and Ga2O3. The defect chalcopyrite (Cu,Ga)(0.905)GaS2 splits into a near-stoichiometric CuGaS2 and Cu-deficient subic (sphalerite-like) phase of the (Cu,Ga)(0.8)S composition. Such a phenomenon has been considered in terms of characteristic features of chalcopyrite and sphalerite crystal structures. Delafossite CuGaO2 at 5 GPa and 1000 degrees C was found to recrystallize entirely, which results in the disappearance of the stacking faults in its layered structure. [GRAPHICS] (C) 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim
Peer review: yes
DOI: 10.1002/pssb.201451013
ISSN: 0370-1972
Publisher Version: 10.1002/pssb.201451013
Appears in Collections:CICECO - Artigos

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