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Title: Minority anion substitution by Ni in ZnO
Author: Pereira, L. M. C.
Wahl, U.
Correia, J. G.
Amorim, L. M.
Silva, D. J.
Bosne, E.
Decoster, S.
da Silva, M. R.
Temst, K.
Vantomme, A.
Issue Date: 2013
Abstract: We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.
Peer review: yes
DOI: 10.1063/1.4820254
ISSN: 0003-6951
Publisher Version: 10.1063/1.4820254
Appears in Collections:CICECO - Artigos

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