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http://hdl.handle.net/10773/19813| Title: | Band gaps of wurtzite ScxGa1-xN alloys |
| Author: | Tsui, H. C. L. Goff, L. E. Rhode, S. K. Pereira, S. Beere, H. E. Farrer, I. Nicoll, C. A. Ritchie, D. A. Moram, M. A. |
| Keywords: | LIGHT-EMITTING-DIODES ELECTRONIC-PROPERTIES CUBIC GAN SCGAN FILMS SCN MICROSTRUCTURE SPECTRA SCAS |
| Issue Date: | 2015 |
| Publisher: | AMER INST PHYSICS |
| Abstract: | Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 <= x <= 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I-1- and I-2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1-xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. (C) 2015 AIP Publishing LLC. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/19813 |
| DOI: | 10.1063/1.4916679 |
| ISSN: | 0003-6951 |
| Publisher Version: | 10.1063/1.4916679 |
| Appears in Collections: | CICECO - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Band gaps of wurtzite ScxGa1-xN alloys_10.10631.4916679.pdf | 621.04 kB | Adobe PDF | View/Open |
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