Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/19762
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dc.contributor.authorAraujo, E. B.pt
dc.contributor.authorLima, E. C.pt
dc.contributor.authorBdikin, I. K.pt
dc.contributor.authorKholkin, A. L.pt
dc.date.accessioned2017-12-07T19:23:58Z-
dc.date.issued2016pt
dc.identifier.issn0015-0193pt
dc.identifier.urihttp://hdl.handle.net/10773/19762-
dc.description.abstractPiezoeresponse force microscopy (PFM) and local piezoresponse hysteresis loops were used to study the imprint effect in PbZr1-xTixO3 thin films at compositions around the morphotropic phase boundary (MPB). Schottky barriers and mechanical coupling between film-substrate were excluded as origin for the imprint in these films. Comparing the composition dependence of the effective d(33) before poling with some reports in the literature, the existence of point defects such as complex vacancies (and Ti3+ centers is discussed as probable origin for the imprint effect observed here.pt
dc.language.isoengpt
dc.publisherTAYLOR & FRANCIS LTDpt
dc.relationinfo:eu-repo/grantAgreement/FCT/COMPETE/132936/PTpt
dc.relationinfo:eu-repo/grantAgreement/FCT/5876/147332/PTpt
dc.rightsrestrictedAccesspor
dc.subjectFERROELECTRIC CAPACITORSpt
dc.subjectSELF-POLARIZATIONpt
dc.subjectMECHANISMSpt
dc.subjectBEHAVIORpt
dc.titleImprint effect in PZT thin films at compositions around the morphotropic phase boundarypt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage18pt
degois.publication.issue1pt
degois.publication.lastPage26pt
degois.publication.titleFERROELECTRICSpt
degois.publication.volume498pt
dc.date.embargo10000-01-01-
dc.relation.publisherversion10.1080/00150193.2016.1166421pt
dc.identifier.doi10.1080/00150193.2016.1166421pt
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