Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/19539
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dc.contributor.authorZhu, Xiaolipt
dc.contributor.authorWang, Zhonghuapt
dc.contributor.authorSu, Xinmingpt
dc.contributor.authorVilarinho, Paula M.pt
dc.date.accessioned2017-12-07T19:16:08Z-
dc.date.issued2014pt
dc.identifier.issn1944-8244pt
dc.identifier.urihttp://hdl.handle.net/10773/19539-
dc.description.abstractTargeting low temperature cofired ceramics (LTCC) applications and base-metal electrode multilayer ceramic capacitors (BME-MLCCs), ceramics of a new composition, tricopper tellurate (Cu3TeO6), are reported here. The crystal structure of Cu3TeO6 was determined to be cubic, Ia3, with the unit cell parameter a = 9.538 angstrom. The sequence of phase formation is proposed with the oxidation of tetravalent tellurium (Te4+) into hexavalent tellurium (Te6+) as a key step for the formation of Cu3TeO6. Ceramics sintered at 865 degrees C with densities of 94% exhibit two dielectric anomalies in the temperature dependence of the dielectric response, around -150 degrees C and +50 degrees C, respectively, accompanied by obvious frequency dispersion of the relative permittivity (epsilon(r)) and dielectric losses (tan delta), with an Arrhenius like behavior. A temperature stable dielectric region (near room temperature) formed between the two anomalies with epsilon(r) similar to 12 and tan delta similar to 0.01, and a very low positive temperature coefficient of the relative permittivity (TC epsilon(r)), 2.07 X 10(-4) degrees C-1, was obtained in the same region. The low temperature dielectric anomaly is associated with the possible mixed Cu+/Cu2+ valence in Cu3TeO6 ceramics, while the high temperature anomaly is attributed to point defect ordering, including V-O, Cu-Cu2+(+)',which might be formed during sintering. Therefore, Cu3TeO6 ceramics are of interest in view of not only the possible applications in BME-MLCCs, LTCC, and related technologies, but also for their possible compatibility with low cost abundant Cu electrodes.pt
dc.language.isoengpt
dc.publisherAMER CHEMICAL SOCpt
dc.relationinfo:eu-repo/grantAgreement/FCT/COMPETE/132936/PTpt
dc.relationinfo:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBD%2F44311%2F2008/PTpt
dc.relationinfo:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBPD%2F82534%2F2011/PTpt
dc.rightsrestrictedAccesspor
dc.subjectCRYSTAL-STRUCTUREpt
dc.subjectBI2O3-TIO2-TEO2 SYSTEMpt
dc.subjectCUTEO3pt
dc.subjectCUTE2O5pt
dc.titleNew Cu3TeO6 Ceramics: Phase Formation and Dielectric Propertiespt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage11326pt
degois.publication.issue14pt
degois.publication.lastPage11332pt
degois.publication.titleACS APPLIED MATERIALS & INTERFACESpt
degois.publication.volume6pt
dc.date.embargo10000-01-01-
dc.relation.publisherversion10.1021/am501742zpt
dc.identifier.doi10.1021/am501742zpt
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