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Issue DateTitleAuthor(s)TypeAccess Type
2001Optical doping of nitrides by ion implantationAlves, E.; Lorenz, K.; Vianden, R.; Boemare, C.; Soares, M.J.; Monteiro, T.articleopenAccess
Apr-2007Structural and optical characterisation of Eu implanted AlxGa1-xNLorenz, K.; Alves, E.; Monteiro, T.; Cruz, A.; Peres, M.articlerestrictedAccess
Apr-2007Implantation of nanoporous GaN with Eu ionsMagalhães, S.; Lorenz, K.; Peres, M.; Monteiro, T.; Tripathy, S.; Alves, E.articlerestrictedAccess
2006High temperature annealing of rare earth implanted GaN films: Structural and optical propertiesLorenz, K.; Wahl, U.; Alves, E.; Nogales, E.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.; Wojdak, M.; Braud, A.; Monteiro, T.; Wojtowicz, T.; Ruterana, P.; Ruffenach, S.; Briot, O.articlerestrictedAccess
2006Optical doping of AlN by rare earth implantationLorenz, K.; Alves, E.; Monteiro, T.; Soares, M.J.; Peres, M.; Smulders, P.J.M.articlerestrictedAccess
22-Mar-2008Defect studies on fast and thermal neutron irradiated GaNLorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T.articlerestrictedAccess
2003Implantation and annealing studies of Tm-implanted GaNLorenz, K.; Alves, E.; Wahl, U.; Monteiro, T.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.; Vianden, R.articlerestrictedAccess
2003Lattice location and optical activation of rare earth implanted GaNWahl, U.; Alves, E.; Lorenz, K.; Correia, J.G.; Monteiro, T.; De Vries, B.; Vantomme, A.; Vianden, R.articlerestrictedAccess
2001Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M. J.; Ferreira, R. A. Sá; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E.articlerestrictedAccess
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