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Issue Date
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1999
Time resolved photoluminescence of cubic Mg doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Schoettker, B.
;
Frey, T.
;
As, D.J.
;
Schikora, D.
;
Lischka, K.
conferenceObject
1999
Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Poisson, M.A.
;
Beaumont, B.
conferenceObject
1999
Electrical and photoelectronic properties of hexagonal GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, L.
;
Pereira, E.
;
Schön, Q.
;
Heuken, M.
article
1997
Temperature behaviour of the yellow emission in GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Leroux, M.
;
Beaumont, B.
;
Gibart, P.
article
1998
Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Leroux, M.
;
Beaumont, B.
;
Gibart, P.
article
1999
Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy
Seitz, R.
;
Monteiro, T.
;
Pereira, E.
;
Di Forte-Poisson, M.
article
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Monteiro, T.
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Gaspar, C.
3
Beaumont, B.
2
Gibart, P.
2
Leroux, M.
1
As, D.J.
1
Di Forte-Poisson, M.
1
Frey, T.
1
Heuken, M.
1
Lischka, K.
.
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Subject
4
Photoluminescence
3
Electron emission
3
Energy gap
2
Electron energy levels
2
GaN
2
Metallorganic chemical vapor depo...
2
Semiconductor doping
1
Activation energy
1
Band structure
1
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Date issued
4
1999
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1998
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1997