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Issue DateTitleAuthor(s)TypeAccess Type
21-Oct-2010Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantationMagalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K.articleopenAccess
Apr-2007Structural and optical characterisation of Eu implanted AlxGa1-xNLorenz, K.; Alves, E.; Monteiro, T.; Cruz, A.; Peres, M.articlerestrictedAccess
Apr-2007Implantation of nanoporous GaN with Eu ionsMagalhães, S.; Lorenz, K.; Peres, M.; Monteiro, T.; Tripathy, S.; Alves, E.articlerestrictedAccess
2011Radiation damage formation and annealing in GaN and ZnOLorenz, K.; Peres, M.; Franco, N.; Marques, J.G.; Miranda, S.M.C.; Magalhães, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E.conferenceObjectrestrictedAccess
2010Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/Aluminium Nitride SuperlatticePeres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Franco, N.; Lorenz, K.; Alves, E.; Damilano, B.; Massies, J.; Dussaigne, A.; Grandjean, N.articlerestrictedAccess
2006Optical doping of AlN by rare earth implantationLorenz, K.; Alves, E.; Monteiro, T.; Soares, M.J.; Peres, M.; Smulders, P.J.M.articlerestrictedAccess
28-Jan-2010Optical doping and damage formation in AIN by Eu implantationLorenz, K.; Alves, E.; Gloux, F.; Ruterana, P.; Peres, M.; Neves, A. J.; Monteiro, T.articleopenAccess
2011Structural and optical properties of Er implanted AlN thin films: green and infrared photoluminescence at room temperatureSoares, M.J.; Leitão, J.P.; Silva, M.I.N. da; González, J.C.; Matinaga, F.M.; Lorenz, K.; Alves, E.; Peres, M.; Monteiro, T.articleopenAccess
2010Defect studies and optical activation of Yb doped GaNLorenz, K.; Alves, E.; Magalhes, S.; Peres, M.; Monteiro, T.; Kozanecki, A.; Valerio, M.E.G.articlerestrictedAccess
2011Rapid thermal annealing of rare earth implanted ZnO epitaxial layersMiranda, S.M.C.; Peres, M.; Monteiro, T.; Alves, E.; Sun, H.D.; Geruschke, T.; Vianden, R.; Lorenz, K.articlerestrictedAccess
Results 1-10 of 13 (Search time: 0.005 seconds).