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2002
Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaN
Niehus, M.,
;
Sanguino, P.
;
Schwarz, R.
;
Monteiro, T.
;
Soares, M.J.
;
Pereira, E.
;
Kunst, M.
;
Koyonov, S.
article
1996
2.2 eV luminescence in GaN
Hofmann, D. M.
;
Kovalev, D.
;
Steude, G.
;
Volm, D.
;
Meyer, B. K.
;
Xavier, C.
;
Monteiro, T.
;
Pereira, E.
;
Mokov, E. N.
;
Amano, H.
;
Akasaki, I.
conferenceObject
1999
Time resolved photoluminescence of cubic Mg doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Schoettker, B.
;
Frey, T.
;
As, D.J.
;
Schikora, D.
;
Lischka, K.
conferenceObject
1999
Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Poisson, M.A.
;
Beaumont, B.
conferenceObject
1999
Electrical and photoelectronic properties of hexagonal GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, L.
;
Pereira, E.
;
Schön, Q.
;
Heuken, M.
article
1998
Distribution of 1.68 eV emission from diamond films
Correia, M.R.
;
Monteiro, T.
;
Pereira, E.
;
Costa, L.C.
article
1997
Temperature behaviour of the yellow emission in GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Leroux, M.
;
Beaumont, B.
;
Gibart, P.
article
1993
Spatial distribution of Mn-related emission in GaP studied by cathodoluminescence and photoluminescence
Piqueras, J.
;
Domínguez-Adame, F.
;
Monteiro, T.
;
Pereira, E.
article
1991
Complex formation in Mn-doped GaP samples
Monteiro, T.
;
Pereira, E.
article
1992
Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV
Monteiro, T.
;
Pereira, E.
article
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2
Pereira, S.
2
Sanguino, P.
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Schwarz, R.
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Subject
13
Photoluminescence
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Energy gap
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Diamond
3
Electron emission
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GaN
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GaP
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Metallorganic chemical vapor depo...
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PL
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Date issued
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2000 - 2003
18
1990 - 1999