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2006
Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
Cerqueira, M.F.
;
Stepikhova, M.
;
Losurdo, M.
;
Monteiro, T.
;
Soares, M.J.
;
Peres, M.
;
Neves, A.
;
Alves, E.
article
1991
Complex formation in Mn-doped GaP samples
Monteiro, T.
;
Pereira, E.
article
1990
Non-radiative processes in deep centres of diamond
Pereira, E.
;
Monteiro, T.
article
2011
Radiation damage formation and annealing in GaN and ZnO
Lorenz, K.
;
Peres, M.
;
Franco, N.
;
Marques, J.G.
;
Miranda, S.M.C.
;
Magalhães, S.
;
Monteiro, T.
;
Wesch, W.
;
Alves, E.
;
Wendler, E.
conferenceObject
1999
Time resolved photoluminescence of cubic Mg doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Schoettker, B.
;
Frey, T.
;
As, D.J.
;
Schikora, D.
;
Lischka, K.
conferenceObject
1999
Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Poisson, M.A.
;
Beaumont, B.
conferenceObject
2003
Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN
Sanguino, P.
;
Niehus, M.
;
Melo, L.
;
Schwarz, R.
;
Fedorov, A.
;
Martinho, J.M.G.
;
Soares, Manuel
;
Monteiro, Teresa
article
2004
Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses
Niehus, M.
;
Sanguino, P.
;
Schwarz, R.
;
Fedorov, A.
;
Martinho, J.M.G.
;
Soares, Manuel
;
Monteiro, Teresa
;
Wünsch, F.
;
Kunst, M.
article
2001
Photoluminescence and lattice location of Eu and Pr implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M. J.
;
Ferreira, R. A. Sá
;
Carlos, L. D.
;
Lorenz, K.
;
Vianden, R.
;
Alves, E.
article
2003
Optical doping of ZnO with Tm by ion implantation
Rita, E.
;
Alves, E.
;
Wahl, U.
;
Correia, J.G.
;
Neves, A.J.
;
Soares, M.J.
;
Monteiro, T.
article
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Author
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Monteiro, T.
22
Alves, E.
16
Peres, M.
13
Pereira, E.
12
Soares, M.J.
10
Lorenz, K.
7
Monteiro, Teresa
7
Rodrigues, J.
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Subject
11
ZnO
9
Ion implantation
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GaN
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Gallium nitride
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Implantation
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PL
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Sapphire
5
Semiconductor doping
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Energy gap
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