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Issue DateTitleAuthor(s)TypeAccess Type
1999Time resolved photoluminescence of cubic Mg doped GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Schoettker, B.; Frey, T.; As, D.J.; Schikora, D.; Lischka, K.conferenceObjectopenAccess
1999Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layersSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B.conferenceObjectopenAccess
1998Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Leroux, M.; Beaumont, B.; Gibart, P.articlerestrictedAccess
1999Electrical and photoelectronic properties of hexagonal GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, L.; Pereira, E.; Schön, Q.; Heuken, M.articlerestrictedAccess
1997Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphireMonteiro, T.; Pereira, E.; Correia, M.R.; Xavier, C.; Hofmann, D.M.; Meyer, B.K.; Fischer, S.; Cremades, A.; Piqueras, J.articlerestrictedAccess
1998Distribution of 1.68 eV emission from diamond filmsCorreia, M.R.; Monteiro, T.; Pereira, E.; Costa, L.C.articleopenAccess
1996Cathodoluminescence study of GaN epitaxial layersCremades, A.; Piqueras, J.; Xavier, C.; Monteiro, T.; Pereira, E.; Meyer, B.K.; Hofmann, D.M.; Fischer, S.articlerestrictedAccess
1997Temperature behaviour of the yellow emission in GaNSeitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Leroux, M.; Beaumont, B.; Gibart, P.articleopenAccess
1993Spatial distribution of Mn-related emission in GaP studied by cathodoluminescence and photoluminescencePiqueras, J.; Domínguez-Adame, F.; Monteiro, T.; Pereira, E.articlerestrictedAccess
1992Luminescence at 1.96 eV in n-type GaPPereira, E.; Monteiro, T.articlerestrictedAccess
Results 21-30 of 32 (Search time: 0.018 seconds).