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2000
Steady-state and time-resolved luminescence in InGaN layers
Seitz, R.
;
Gaspar, C.
;
Correia, M.
;
Monteiro, T.
;
Pereira, E.
;
Heuken, M.
;
Schoen, O.
article
1999
Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy
Seitz, R.
;
Monteiro, T.
;
Pereira, E.
;
Di Forte-Poisson, M.
article
2000
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Vacas, J.
;
Lahrèche, H.
;
Monteiro, T.
;
Caspar, C.
;
Pereira, E.
;
Brylinski, C.
;
Di Forte-Poisson, M.A.
article
1993
Photoluminescence studies of heat-treated GAP:S samples
Monteiro, T.
;
Pereira, E.
;
Dominguez-Adame, F.
;
Piqueras, J.
article
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Monteiro, T.
7
Seitz, R.
6
Gaspar, C.
4
Piqueras, J.
3
Beaumont, B.
3
Correia, M.R.
3
Hofmann, D. M.
3
Meyer, B. K.
3
Xavier, C.
2
Alves, E.
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Subject
13
Photoluminescence
5
Energy gap
3
Diamond
3
Electron emission
3
GaN
3
GaP
3
Metallorganic chemical vapor depo...
3
PL
2
Activation energy
2
Cathodoluminescence
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Date issued
6
2000 - 2003
18
1990 - 1999