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1992
Luminescence at 1.96 eV in n-type GaP
Pereira, E.
;
Monteiro, T.
article
Jan-2001
Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers
Pereira, S.
;
Correia, M.R.
;
Monteiro, T.
;
Pereira, E.
;
Alves, E.
;
Sequeira, A.D.
;
Franco, N.
article
2003
Optical properties and transport in PLD-GaN
Niehus, M.
;
Sanguino, P.
;
Monteiro, T.
;
Soares, M.J.
;
Pereira, E.
;
Vieira, M.
;
Koynov, S.
;
Schwarz, R.
article
1996
Cathodoluminescence study of GaN epitaxial layers
Cremades, A.
;
Piqueras, J.
;
Xavier, C.
;
Monteiro, T.
;
Pereira, E.
;
Meyer, B. K.
;
Hofmann, D. M.
;
Fischer, S.
article
1991
Delayed luminescence of the H3 centre in diamond
Pereira, E.
;
Monteiro, T.
article
1997
Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
Monteiro, T.
;
Pereira, E.
;
Correia, M. R.
;
Xavier, C.
;
Hofmann, D. M.
;
Meyer, B. K.
;
Fischer, S.
;
Cremades, A.
;
Piqueras, J.
article
1991
Red emission in Mn doped GaP
Monteiro, T.
;
Pereira, E.
article
1990
Non-radiative processes in deep centres of diamond
Pereira, E.
;
Monteiro, T.
article
1998
Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Leroux, M.
;
Beaumont, B.
;
Gibart, P.
article
2001
Indium content determination related with structural and optical properties of InGaN layers
Pereira, S.
;
Correia, M.R.
;
Monteiro, T.
;
Pereira, E.
;
Soares, M.R.
;
Alves, E.
article
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Monteiro, T.
7
Seitz, R.
6
Gaspar, C.
4
Piqueras, J.
3
Beaumont, B.
3
Correia, M.R.
3
Hofmann, D. M.
3
Meyer, B. K.
3
Xavier, C.
2
Alves, E.
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Subject
13
Photoluminescence
5
Energy gap
3
Diamond
3
Electron emission
3
GaN
3
GaP
3
Metallorganic chemical vapor depo...
3
PL
2
Activation energy
2
Cathodoluminescence
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Date issued
6
2000 - 2003
18
1990 - 1999