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Issue DateTitleAuthor(s)TypeAccess Type
Sep-2005A green-emitting CdSe/poly(butyl acrylate) nanocompositePeres, M.; Costa, L. C.; Neves, A.; Soares, M. J.; Monteiro, T.; Esteves, A. C.; Barros-Timmons, A.; Trindade, T.; Kholkin, A.; Alves, E.articlerestrictedAccess
Jul-2005Near-band-edge slow luminescence in nominally undoped bulk ZnOMonteiro, T.; Neves, A.J.; Carmo, M.C.; Soares, M.J.; Peres, M.; Wang, J.; Alves, E.; Rita, E.; Wahl, U.articleopenAccess
Jan-2006Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantationMonteiro, T.; Neves, A.J.; Carmo, M.C.; Soares, M.J.; Peres, M.; Alves, E.; Rita, E.; Wahl, U.articlerestrictedAccess
Sep-2006Optical behaviour of Er doped rutile by ion implantationAlves, E.; Pinto, J.V.; da Silva, R.C.; Peres, M.; Soares, M.J.; Monteiro, T.articlerestrictedAccess
Dec-2006Optical and structural studies in Eu-implanted AlN filmsPeres, Marco; Cruz, A.; Soares, Manuel; Neves, Armando; Monteiro, Teresa; Lorenz, K.; Alves, E.articlerestrictedAccess
15-Dec-2018Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperaturesFialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E.articleopenAccess
14-May-2018Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctionsTeixeira, B. M. S.; Timopheev, A. A.; Caçoilo, N. F. F.; Auffret, S.; Sousa, R. C.; Dieny, B.; Alves, E.; Sobolev, N. A.articleopenAccess
2012Optical doping of AlxGa1-xN compounds by ion implantation of Tm ionsFialho, M.; Lorenz, K.; Magalhães, S; Redondo-Cubero, A.; Rodrigues, J.; Santos, N.F; Monteiro, T.; Alves, E.articleopenAccess
12-Aug-2020Impact of ion irradiation-induced interface intermixing on the magnetic and electrical properties of magnetic tunnel junctionsTeixeira, B. M. S.; Timopheev, A. A.; Caçoilo, N.; Cuchet, L.; Mondaud, J.; Childress, J. R.; Magalhães, S.; Alves, E.; Sobolev, N. A.articleopenAccess
Jun-2019Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with TbRodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T.articleopenAccess
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