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Oct-2004
PL studies on ZnO single crystals implanted with thulium ions
Peres, M.
;
Wang, J.
;
Soares, M. J.
;
Neves, A.
;
Monteiro, T.
;
Rita, E.
;
Wahl, U.
;
Correia, J. G.
;
Alves, E.
article
2002
Luminescence studies of Co implanted sapphires
Monteiro, T.
;
Soares, M.J.
;
Santos, L.
;
Boemare, C.
;
Cascalheira, J.
;
Alves, L.C.
;
Alves, E.
article
2002
Optical activity and damage recovery of erbium implanted strontium titanate
Monteiro, T.
;
Soares, M.J.
;
Boemare, C.
;
Alves, E.
;
Correia, J.G.
article
Jun-2003
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals
Monteiro, T.
;
Boemare, C.
;
Soares, M.J.
;
Rita, E.
;
Alves, E.
article
Jun-2006
Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
Cerqueira, M. F.
;
Losurdo, M.
;
Monteiro, T.
;
Stepikhova, M.
;
Soares, M. J.
;
Peres, M.
;
Alves, E.
article
2002
Influence of annealing atmosphere on the behavior of titanium implanted sapphire
Marques, C.
;
Alves, E.
;
McHargue, C.
;
Ononye, L.C.
;
Monteiro, T.
;
Soares, J.
;
Allard, L.F.
article
2002
Ion beam studies of MBE grown GaN films on (1 1 1) silicon substrates
Alves, E.
;
Barradas, N.P.
;
Monteiro, T.
;
Correia, R.
;
Kreissig, U.
article
2003
Optical doping of ZnO with Tm by ion implantation
Rita, E.
;
Alves, E.
;
Wahl, U.
;
Correia, J.G.
;
Neves, A.J.
;
Soares, M.J.
;
Monteiro, T.
article
2010
Defect studies and optical activation of Yb doped GaN
Lorenz, K.
;
Alves, E.
;
Magalhes, S.
;
Peres, M.
;
Monteiro, T.
;
Kozanecki, A.
;
Valerio, M.E.G.
article
2011
The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD
Peres, Marco
;
Magalhães, Sérgio
;
Rodrigues, Joana
;
Soares, Manuel
;
Fellmann, V.
;
Neves, Armando
;
Alves, E.
;
Daudin, B.
;
Lorenz, K.
;
Monteiro, Teresa
article
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Author
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Monteiro, T.
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Subject
22
Photoluminescence
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Ion implantation
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GaN
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PL
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Optical properties
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RBS
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Annealing
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II-VI semiconductors
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Date issued
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2010 - 2020
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2000 - 2009