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Issue DateTitleAuthor(s)TypeAccess Type
2002Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaNNiehus, M.,; Sanguino, P.; Schwarz, R.; Monteiro, T.; Soares, M.J.; Pereira, E.; Kunst, M.; Koyonov, S.articlerestrictedAccess
19962.2 eV luminescence in GaNHofmann, D. M.; Kovalev, D.; Steude, G.; Volm, D.; Meyer, B. K.; Xavier, C.; Monteiro, T.; Pereira, E.; Mokov, E. N.; Amano, H.; Akasaki, I.conferenceObjectrestrictedAccess
2001Indium content determination related with structural and optical properties of InGaN layersPereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Soares, M.R.; Alves, E.articlerestrictedAccess
2000Steady-state and time-resolved luminescence in InGaN layersSeitz, R.; Gaspar, C.; Correia, M.; Monteiro, T.; Pereira, E.; Heuken, M.; Schoen, O.articlerestrictedAccess
1999Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopySeitz, R.; Monteiro, T.; Pereira, E.; Di Forte-Poisson, M.articlerestrictedAccess
2000Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodesVacas, J.; Lahrèche, H.; Monteiro, T.; Caspar, C.; Pereira, E.; Brylinski, C.; Di Forte-Poisson, M.A.articleopenAccess
1991Delayed luminescence of the H3 centre in diamondPereira, E.; Monteiro, T.articlerestrictedAccess
1993Photoluminescence studies of heat-treated GAP:S samplesMonteiro, T.; Pereira, E.; Dominguez-Adame, F.; Piqueras, J.articleopenAccess
1991Complex formation in Mn-doped GaP samplesMonteiro, T.; Pereira, E.articlerestrictedAccess
1992Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eVMonteiro, T.; Pereira, E.articlerestrictedAccess
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