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Issue DateTitleAuthor(s)TypeAccess Type
2001Optical doping of nitrides by ion implantationAlves, E.; Lorenz, K.; Vianden, R.; Boemare, C.; Soares, M.J.; Monteiro, T.articleopenAccess
1-Jul-2013The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ionsSoares, M. R. N.; Soares, M. J.; Alves, L. C.; Alves, E.; Lorenz, K.; Costa, F. M.; Monteiro, T.articlerestrictedAccess
2012Optical doping of AlxGa1-xN compounds by ion implantation of Tm ionsFialho, M.; Lorenz, K.; Magalhães, S; Redondo-Cubero, A.; Rodrigues, J.; Santos, N.F; Monteiro, T.; Alves, E.articleopenAccess
15-Feb-2012Influence of neutron irradiation and annealing on the optical properties of GaNRodrigues, J.; Peres, M.; Soares, M. J.; Lorenz, K.; Marques, J. G.; Neves, A. J.; Monteiro, T.articlerestrictedAccess
23-Mar-2012Rare earth co-doping nitride layers for visible lightRodrigues, J.; Miranda, S. M. C.; Santos, N. F.; Neves, A. J.; Alves, E.; Lorenz, K.; Monteiro, T.articlerestrictedAccess
7-May-2010Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dotsPeres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Alves, E.; Lorenz, K.; Okuno-Vila, H.; Fellmann, V.; Bougerol, C.; Daudin, B.articlerestrictedAccess
21-Oct-2010Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantationMagalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K.articleopenAccess
Apr-2007Structural and optical characterisation of Eu implanted AlxGa1-xNLorenz, K.; Alves, E.; Monteiro, T.; Cruz, A.; Peres, M.articlerestrictedAccess
Apr-2007Implantation of nanoporous GaN with Eu ionsMagalhães, S.; Lorenz, K.; Peres, M.; Monteiro, T.; Tripathy, S.; Alves, E.articlerestrictedAccess
2010Defect studies and optical activation of Yb doped GaNLorenz, K.; Alves, E.; Magalhes, S.; Peres, M.; Monteiro, T.; Kozanecki, A.; Valerio, M.E.G.articlerestrictedAccess
Results 1-10 of 27 (Search time: 0.005 seconds).