1. Home
  2. DFis - Departamento de Física
  3. DFis - Comunicações
Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/15993
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHofmann, D. M.pt
dc.contributor.authorKovalev, D.pt
dc.contributor.authorSteude, G.pt
dc.contributor.authorVolm, D.pt
dc.contributor.authorMeyer, B. K.pt
dc.contributor.authorXavier, C.pt
dc.contributor.authorMonteiro, T.pt
dc.contributor.authorPereira, E.pt
dc.contributor.authorMokov, E. N.pt
dc.contributor.authorAmano, H.pt
dc.contributor.authorAkasaki, I.pt
dc.date.accessioned2016-08-22T12:10:47Z-
dc.date.issued1996-
dc.identifier.issn0272-9172-
dc.identifier.urihttp://hdl.handle.net/10773/15993-
dc.description.abstractThe yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.pt
dc.language.isoengpt
dc.publisherMaterials Research Societypt
dc.relation.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-0029765051&partnerID=40&md5=db50068d3f8e343c077398c254b76970-
dc.rightsrestrictedAccesspor
dc.subjectCrystal defectspt
dc.subjectEpitaxial growthpt
dc.subjectLuminescencept
dc.subjectMagnetic resonancept
dc.subjectMathematical modelspt
dc.subjectMetallorganic vapor phase epitaxypt
dc.subjectSapphirept
dc.subjectPhotoluminescencept
dc.subjectSilicon carbidept
dc.subjectSpectroscopypt
dc.subjectSubstratespt
dc.title2.2 eV luminescence in GaNpt
dc.typeconferenceObjectpt
dc.peerreviewedyespt
ua.publicationstatuspublishedpt
ua.event.title1995 MRS Fall Meeting; Boston, MApt
ua.event.date27 Novembro - 1 Dezembro, 1995pt
ua.event.typeotherpt
degois.publication.firstPage619pt
degois.publication.lastPage624pt
degois.publication.locationPittsburghpt
degois.publication.titleMaterials Research Society symposium proceedingspt
degois.publication.volume395pt
dc.date.embargo10000-01-01-
dc.identifier.doi10.1557/PROC-395-619pt
Appears in Collections:DFis - Comunicações

Files in This Item:
File Description SizeFormat 
2.2 eV Luminescence in GaN.pdf605.44 kBAdobe PDFrestrictedAccess
Show simple item record


FacebookTwitterLinkedIn
Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.