Browsing by Author Daudin, B.

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Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)TypeAccess Type
2010Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structuresMagalhães, Sérgio; Lorenz, K.; Franco, N.; Barradas, N.P.; Alves, E.; Monteiro, Teresa; Amstatt, B.; Fellmann, V.; Daudin, B.articlerestrictedAccess
21-Oct-2010Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantationMagalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K.articleopenAccess
7-May-2010Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dotsPeres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Alves, E.; Lorenz, K.; Okuno-Vila, H.; Fellmann, V.; Bougerol, C.; Daudin, B.articlerestrictedAccess
2011The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QDPeres, Marco; Magalhães, Sérgio; Rodrigues, Joana; Soares, Manuel; Fellmann, V.; Neves, Armando; Alves, E.; Daudin, B.; Lorenz, K.; Monteiro, TeresaarticlerestrictedAccess
2013Towards the understanding of the intentionally induced yellow luminescence in GaN nanowiresRodrigues, J; Miranda, S.M.C; Fernandes, A.J.S; Nogales, E; Alves, L.C.; Alves, E.; Tourbot, G; Auzelle, T.; Daudin, B.; Méndez, B.; Trindade, T.; Lorenz, K; Costa, F.M; Monteiro, T.articlerestrictedAccess
2013Towards the understanding of the intentionally induced yellow luminescence in GaN nanowiresRodrigues, J.; Miranda, S. M. C.; Fernandes, A. J. S.; Nogales, E.; Alves, L. C.; Alves, E.; Tourbot, G.; Auzelle, T.; Daudin, B.; Mendez, B.; Trindade, T.; Lorenz, K.; Costa, F. M.; Monteiro, T.articlerestrictedAccess