Issue Date | Title | Author(s) | Type | Access Type |
2010 | Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures | Magalhães, Sérgio; Lorenz, K.; Franco, N.; Barradas, N.P.; Alves, E.; Monteiro, Teresa; Amstatt, B.; Fellmann, V.; Daudin, B. | article | |
21-Oct-2010 | Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation | Magalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K. | article | |
7-May-2010 | Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots | Peres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Alves, E.; Lorenz, K.; Okuno-Vila, H.; Fellmann, V.; Bougerol, C.; Daudin, B. | article | |
2011 | The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD | Peres, Marco; Magalhães, Sérgio; Rodrigues, Joana; Soares, Manuel; Fellmann, V.; Neves, Armando; Alves, E.; Daudin, B.; Lorenz, K.; Monteiro, Teresa | article | |
2013 | Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires | Rodrigues, J.; Miranda, S. M. C.; Fernandes, A. J. S.; Nogales, E.; Alves, L. C.; Alves, E.; Tourbot, G.; Auzelle, T.; Daudin, B.; Mendez, B.; Trindade, T.; Lorenz, K.; Costa, F. M.; Monteiro, T. | article | |
2013 | Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires | Rodrigues, J; Miranda, S.M.C; Fernandes, A.J.S; Nogales, E; Alves, L.C.; Alves, E.; Tourbot, G; Auzelle, T.; Daudin, B.; Méndez, B.; Trindade, T.; Lorenz, K; Costa, F.M; Monteiro, T. | article | |