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| Issue Date | Title | Author(s) | Type | Access Type |
| 2012 | AIN content influence on the properties of Al x Ga1- x N doped with Pr ions | Fialho, M.; Magalhães, Sérgio; Alves, L.C.; Marques, C.; Maalej, R.; Monteiro, Teresa; Lorenz, K.; Alves, E. | article |  |
| 2005 | Annealing properties of ZnO films grown using diethyl zinc and tertiary butanol | Wang, J.Z.; Peres, M.; Scares, J.; Gorochov, O.; Barradas, N.P.; Alves, E.; Lewis, J.E.; Fortunato, E.; Neves, A.; Monteiro, T. | article | |
| 2016 | Composition measurement of epitaxial ScxGa1-xN films | Tsui, H. C. L.; Goff, L. E.; Barradas, N. P.; Alves, E.; Pereira, S.; Palgrave, R. G.; Davies, R. J.; Beere, H. E.; Farrer, I.; Ritchie, D. A.; Moram, M. A. | article | |
| 2015 | Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents | Magalhaes, S.; Watson, I. M.; Pereira, S.; Franco, N.; Tan, L. T.; Martin, R. W.; O'Donnell, K. P.; Alves, E.; Araujo, J. P.; Monteiro, T.; Lorenz, K. | article | |
| Jan-2001 | Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers | Pereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Alves, E.; Sequeira, A.D.; Franco, N. | article |  |
| 2010 | Damage recovery and optical activity in europium implanted wide gap oxides | Alves, E.; Marques, C.; Franco, N.; Alves, L.C.; Peres, M.; Soares, M.J.; Monteiro, T. | article | |
| 15-Dec-2018 | Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures | Fialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E. | article | |
| 2010 | Defect studies and optical activation of Yb doped GaN | Lorenz, K.; Alves, E.; Magalhes, S.; Peres, M.; Monteiro, T.; Kozanecki, A.; Valerio, M.E.G. | article | |
| 22-Mar-2008 | Defect studies on fast and thermal neutron irradiated GaN | Lorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T. | article | |
| 2013 | Disorder induced violet/blue luminescence in rf-deposited ZnO films | Peres, M.; Magalhaes, S.; Soares, M. R.; Soares, M. J.; Rino, L.; Alves, E.; Lorenz, K.; Correia, M. R.; Lourenco, A. C.; Monteiro, T. | article | |
| 2014 | Doping of Ga2O3 bulk crystals and NWs by ion implantation | Lorenz, K.; Peres, M.; Felizardo, M.; Correia, J. G.; Alves, L. C.; Alves, E.; Lopez, I.; Nogales, E.; Mendez, B.; Piqueras, J.; Barbosa, M. B.; Araujo, J. P.; Goncalves, J. N.; Rodrigues, J.; Rino, L.; Monteiro, T.; Villora, E. G.; Shimamura, K. | article | |
| 2010 | Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures | Magalhães, Sérgio; Lorenz, K.; Franco, N.; Barradas, N.P.; Alves, E.; Monteiro, Teresa; Amstatt, B.; Fellmann, V.; Daudin, B. | article | |
| 2000 | Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire | Alves, E.; Silva, M.F.; Soares, J.C.; Monteiro, T.; Soares, J.; Santos, L. | article | |
| 15-Dec-2010 | Effect of Eu2O3 doping on Ta2O5 crystal growth by the laser-heated pedestal technique | Saggioro, B.Z.; Andreeta, M.R.B.; Hernandes, A.C.; MacAtro, M.; Peres, M.; Costa, F.M.; Monteiro, T.; Franco, N.; Alves, E. | article | |
| 2006 | Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots | Cerqueira, M.F.; Stepikhova, M.; Losurdo, M.; Monteiro, T.; Soares, M.J.; Peres, M.; Neves, A.; Alves, E. | article | |
| 2002 | Erbium implantation in strontium titanate | Araújo, J.P.; Wahl, U.; Alves, E.; Correia, J.G.; Monteiro, T.; Soares, J.; Boemare, C. | article | |
| 2010 | Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - Annealing effect on the Er emission | Cerqueira, M.F.; Monteiro, Teresa; Soares, Manuel; Kozanecki, A.; Alpuim, P.; Alves, E. | article | |
| 21-Oct-2010 | Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation | Magalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K. | article | |
| 2001 | Green and red emission in Ca implanted GaN samples | Monteiro, T.; Boemare, C.; Soares, M.J.; Alves, E.; Liu, C. | article | |
| Mar-2001 | Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples | Monteiro, T.; Soares, J.; Correia, M.R.; Alves, E. | article | |