Showing results 6 to 25 of 150
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| Issue Date | Title | Author(s) | Type | Access Type |
| 1996 | Cathodoluminescence study of GaN epitaxial layers | Cremades, A.; Piqueras, J.; Xavier, C.; Monteiro, T.; Pereira, E.; Meyer, B. K.; Hofmann, D. M.; Fischer, S. | article |  |
| 2003 | Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma | Sanguino, P.; Niehus, M.; Melo, L.V.; Schwarz, R.; Koynov, S.; Monteiro, T.; Soares, J.; Alves, H.; Meyer, B.K. | article | |
| 2000 | Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes | Vacas, J.; Lahrèche, H.; Monteiro, T.; Caspar, C.; Pereira, E.; Brylinski, C.; Di Forte-Poisson, M.A. | article |  |
| 1991 | Complex formation in Mn-doped GaP samples | Monteiro, T.; Pereira, E. | article | |
| 2015 | Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents | Magalhaes, S.; Watson, I. M.; Pereira, S.; Franco, N.; Tan, L. T.; Martin, R. W.; O'Donnell, K. P.; Alves, E.; Araujo, J. P.; Monteiro, T.; Lorenz, K. | article | |
| Jan-2001 | Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers | Pereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Alves, E.; Sequeira, A.D.; Franco, N. | article | |
| 2010 | Damage recovery and optical activity in europium implanted wide gap oxides | Alves, E.; Marques, C.; Franco, N.; Alves, L.C.; Peres, M.; Soares, M.J.; Monteiro, T. | article | |
| 15-Dec-2018 | Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures | Fialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E. | article | |
| 2010 | Defect studies and optical activation of Yb doped GaN | Lorenz, K.; Alves, E.; Magalhes, S.; Peres, M.; Monteiro, T.; Kozanecki, A.; Valerio, M.E.G. | article | |
| 22-Mar-2008 | Defect studies on fast and thermal neutron irradiated GaN | Lorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T. | article | |
| 1991 | Delayed luminescence of the H3 centre in diamond | Pereira, E.; Monteiro, T. | article | |
| 2008 | Development and characterization of light-emitting diodes (LEDs) based on ruthenium complex single layer for transparent displays | Santos, G.; Fonseca, F.; Andrade, A.M.; Patrocínio, A.O.T.; Mizoguchi, S.K.; Iha, N.Y.M.; Peres, M.; Monteiro, T.; Pereira, L. | article | |
| 2013 | Disorder induced violet/blue luminescence in rf-deposited ZnO films | Peres, M.; Magalhaes, S.; Soares, M. R.; Soares, M. J.; Rino, L.; Alves, E.; Lorenz, K.; Correia, M. R.; Lourenco, A. C.; Monteiro, T. | article | |
| 1998 | Distribution of 1.68 eV emission from diamond films | Correia, M.R.; Monteiro, T.; Pereira, E.; Costa, L.C. | article | |
| 2014 | Doping of Ga2O3 bulk crystals and NWs by ion implantation | Lorenz, K.; Peres, M.; Felizardo, M.; Correia, J. G.; Alves, L. C.; Alves, E.; Lopez, I.; Nogales, E.; Mendez, B.; Piqueras, J.; Barbosa, M. B.; Araujo, J. P.; Goncalves, J. N.; Rodrigues, J.; Rino, L.; Monteiro, T.; Villora, E. G.; Shimamura, K. | article | |
| 2000 | Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire | Alves, E.; Silva, M.F.; Soares, J.C.; Monteiro, T.; Soares, J.; Santos, L. | article | |
| 15-Dec-2010 | Effect of Eu2O3 doping on Ta2O5 crystal growth by the laser-heated pedestal technique | Saggioro, B.Z.; Andreeta, M.R.B.; Hernandes, A.C.; MacAtro, M.; Peres, M.; Costa, F.M.; Monteiro, T.; Franco, N.; Alves, E. | article | |
| 2011 | Effect of processing method on physical properties of Nb2O5 | Soares, M.R.N.; Leite, S.; Nico, C.; Peres, M.; Fernandes, A.J.S.; Graça, M.P.F.; Matos, M.; Monteiro, R.; Monteiro, T.; Costa, F.M. | article | |
| 2006 | Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots | Cerqueira, M.F.; Stepikhova, M.; Losurdo, M.; Monteiro, T.; Soares, M.J.; Peres, M.; Neves, A.; Alves, E. | article | |
| 1999 | Electrical and photoelectronic properties of hexagonal GaN | Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, L.; Pereira, E.; Schön, Q.; Heuken, M. | article | |