Browsing by Author Alves, E.

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Showing results 79 to 85 of 85 < previous 
Issue DateTitleAuthor(s)TypeAccess Type
2015The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxyTsui, H. C. L.; Goff, L. E.; Barradas, N. P.; Alves, E.; Pereira, S.; Beere, H. E.; Farrer, I.; Nicoll, C. A.; Ritchie, D. A.; Moram, M. A.articlerestrictedAccess
1-Jul-2013The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ionsSoares, M. R. N.; Soares, M. J.; Alves, L. C.; Alves, E.; Lorenz, K.; Costa, F. M.; Monteiro, T.articlerestrictedAccess
2004The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin FilmsStepikhova, M.V.; Cerqueira, M.F.; Losurdo, M.; Giangregorio, M.M.; Alves, E.; Monteiro, T.; Soares, M.J.articlerestrictedAccess
2011The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QDPeres, Marco; Magalhães, Sérgio; Rodrigues, Joana; Soares, Manuel; Fellmann, V.; Neves, Armando; Alves, E.; Daudin, B.; Lorenz, K.; Monteiro, TeresaarticlerestrictedAccess
2013Towards the understanding of the intentionally induced yellow luminescence in GaN nanowiresRodrigues, J; Miranda, S.M.C; Fernandes, A.J.S; Nogales, E; Alves, L.C.; Alves, E.; Tourbot, G; Auzelle, T.; Daudin, B.; Méndez, B.; Trindade, T.; Lorenz, K; Costa, F.M; Monteiro, T.articlerestrictedAccess
2013Towards the understanding of the intentionally induced yellow luminescence in GaN nanowiresRodrigues, J.; Miranda, S. M. C.; Fernandes, A. J. S.; Nogales, E.; Alves, L. C.; Alves, E.; Tourbot, G.; Auzelle, T.; Daudin, B.; Mendez, B.; Trindade, T.; Lorenz, K.; Costa, F. M.; Monteiro, T.articlerestrictedAccess
Nov-2005Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ionsMonteiro, T.; Neves, A. J.; Soares, M. J.; Carmo, M. C.; Peres, M.; Alves, E.; Rita, E.articleopenAccess