Browsing by Author Alves, E.

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Issue DateTitleAuthor(s)TypeAccess Type
2010Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structuresMagalhães, Sérgio; Lorenz, K.; Franco, N.; Barradas, N.P.; Alves, E.; Monteiro, Teresa; Amstatt, B.; Fellmann, V.; Daudin, B.articlerestrictedAccess
2000Effect of crystal orientation on defect production and optical activation of Er-implanted sapphireAlves, E.; Silva, M.F.; Soares, J.C.; Monteiro, T.; Soares, J.; Santos, L.articlerestrictedAccess
15-Dec-2010Effect of Eu2O3 doping on Ta2O5 crystal growth by the laser-heated pedestal techniqueSaggioro, B.Z.; Andreeta, M.R.B.; Hernandes, A.C.; MacAtro, M.; Peres, M.; Costa, F.M.; Monteiro, T.; Franco, N.; Alves, E.articlerestrictedAccess
2006Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dotsCerqueira, M.F.; Stepikhova, M.; Losurdo, M.; Monteiro, T.; Soares, M.J.; Peres, M.; Neves, A.; Alves, E.articleopenAccess
2002Erbium implantation in strontium titanateAraújo, J.P.; Wahl, U.; Alves, E.; Correia, J.G.; Monteiro, T.; Soares, J.; Boemare, C.articlerestrictedAccess
2010Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - Annealing effect on the Er emissionCerqueira, M.F.; Monteiro, Teresa; Soares, Manuel; Kozanecki, A.; Alpuim, P.; Alves, E.articlerestrictedAccess
21-Oct-2010Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantationMagalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K.articleopenAccess
2001Green and red emission in Ca implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M.J.; Alves, E.; Liu, C.articlerestrictedAccess
Mar-2001Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samplesMonteiro, T.; Soares, J.; Correia, M.R.; Alves, E.articleopenAccess
Sep-2005A green-emitting CdSe/poly(butyl acrylate) nanocompositePeres, M.; Costa, L. C.; Neves, A.; Soares, M. J.; Monteiro, T.; Esteves, A. C.; Barros-Timmons, A.; Trindade, T.; Kholkin, A.; Alves, E.articlerestrictedAccess
Apr-2001High temperature annealing of Er implanted GaNAlves, E.; Monteiro, T.; Soares, J.; Santos, L.; Silva, M.F.Da.; Soares, J.C.; Lojkowski, W.; Kolesnikov, D.; Vianden, R.; Correia, J.G.articlerestrictedAccess
2010High temperature annealing of Europium implanted AlNLorenz, K.; Magalhães, Sérgio; Alves, E.; Peres, Marco; Monteiro, Teresa; Neves, Armando; Boćkowski, M.articlerestrictedAccess
2006High temperature annealing of rare earth implanted GaN films: Structural and optical propertiesLorenz, K.; Wahl, U.; Alves, E.; Nogales, E.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.; Wojdak, M.; Braud, A.; Monteiro, T.; Wojtowicz, T.; Ruterana, P.; Ruffenach, S.; Briot, O.articlerestrictedAccess
2003Implantation and annealing studies of Tm-implanted GaNLorenz, K.; Alves, E.; Wahl, U.; Monteiro, T.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.; Vianden, R.articlerestrictedAccess
Apr-2007Implantation of nanoporous GaN with Eu ionsMagalhães, S.; Lorenz, K.; Peres, M.; Monteiro, T.; Tripathy, S.; Alves, E.articlerestrictedAccess
2001Indium content determination related with structural and optical properties of InGaN layersPereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Soares, M.R.; Alves, E.articlerestrictedAccess
2002Influence of annealing atmosphere on the behavior of titanium implanted sapphireMarques, C.; Alves, E.; McHargue, C.; Ononye, L.C.; Monteiro, T.; Soares, J.; Allard, L.F.articlerestrictedAccess
2003Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin filmsCerqueira, M.F.; Stepikhova, M.; Losurdo, M.; Giangregorio, M.M.; Alves, E.; Monteiro, T.; Soares, M.J.; Boemare, C.articlerestrictedAccess
Feb-2009Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0≤x≤1) alloysPeres, Marco; Magalhães, Sérgio; Franco, N.; Soares, Manuel; Neves, Armando; Alves, E.; Lorenz, K.; Monteiro, TeresaarticlerestrictedAccess
Sep-2007Influence of the sol-gel growth parameters on the optical and structural properties on LiNbO3 samplesGraça, M.P.F.; Valente, M.A.; Peres, M.; Cruz, A.; Soares, M.J.; Neves, A.J.; Monteiro, T.; Alves, E.; Marques, C.articlerestrictedAccess