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 Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/7086

title: Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
authors: Seitz, R.
Gaspar, C.
Monteiro, T.
Pereira, E.
Poisson, M.A.
Beaumont, B.
keywords: Electron emission
Electron energy levels
Gas lasers
Metallorganic chemical vapor deposition
issue date: 1999
publisher: MRS
abstract: In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same spectral region were identified.
URI: http://hdl.handle.net/10773/7086
ISSN: 0272-9172
publisher version/DOI: http://dx.doi.org/10.1557/PROC-572-419
source: Materials Research Society Symposium - Proceedings
appears in collectionsFIS - Comunicações

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