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 Time resolved photoluminescence of cubic Mg doped GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/7083

title: Time resolved photoluminescence of cubic Mg doped GaN
authors: Seitz, R.
Gaspar, C.
Monteiro, T.
Pereira, E.
Schoettker, B.
Frey, T.
As, D.J.
Schikora, D.
Lischka, K.
keywords: Band structure
Crystal structure
Electron emission
Electron energy levels
Energy gap
Semiconductor doping
issue date: 1999
publisher: MRS
abstract: Mg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.
URI: http://hdl.handle.net/10773/7083
ISSN: 0272-9172
publisher version/DOI: http://dx.doi.org/10.1557/PROC-572-225
source: Materials Research Society Symposium - Proceedings
appears in collectionsFIS - Comunicações

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