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 Optical and RBS studies in Tm implanted ZnO samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6736

title: Optical and RBS studies in Tm implanted ZnO samples
authors: Monteiro, T.
Soares, M.J.
Neves, A.
Oliveira, M.
Rita, E.
Wahl, U.
Alves, E.
keywords: Photoluminescence (PL) spectroscopy
Room temperature (RT)
Rutherford backscattering/channeling spectroscopy (RBS/C)
Surface barriers
issue date: 2004
publisher: WILEY-VCH Verlag GmbH
abstract: We report on optical and structural analysis of Tm implanted ZnO [0001] single crystals. The samples were implanted at room temperature with 150 keV Tm+ ions with a nominal fluence of 5×1016 Tm +/cm2 and subsequently air annealed for 30 min at 800°C, 900°C and 950°C. The implantation damage and annealing effects were investigated with Rutherford Backscattering/Channelling Spectroscopy. We observe that following implantation the majority of Tm ions are incorporated on Zn sites. The optical properties of as-implanted and annealed samples have been studied by low temperature photoluminescence measurements. Well defined Tm-related near infrared emission were observed upon above band gap excitation and the data are consistent with the presence of multi Tm-related optical centers.
URI: http://hdl.handle.net/10773/6736
ISSN: 1610-1634
publisher version/DOI: http://dx.doi.org/10.1002/pssc.200303930
source: Physica Status Solidi C: Conferences
appears in collectionsFIS - Comunicações

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