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 Photoluminescence and lattice location of Eu and Pr implanted GaN samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6720

title: Photoluminescence and lattice location of Eu and Pr implanted GaN samples
authors: Monteiro, T.
Boemare, C.
Soares, M.J.
Ferreira, R.A. Sá
Carlos, L.D.
Lorenz, K.
Vianden, R.
Alves, E.
keywords: GaN
Implantation
PL
RBS
Gallium nitride
Ion implantation
Metallorganic chemical vapor deposition
Photoluminescence
Rapid thermal annealing
Rare earth elements
Semiconducting films
Semiconductor doping
Lattice locations
Semiconducting gallium compounds
issue date: 2001
publisher: Elsevier
abstract: Rare earth (RE) ions implanted GaN films were studied by optical spectroscopy and RBS techniques. Sharp emission lines due to intra-4fn shell transitions can be observed even at room temperature for the Eu3+ and Pr3+. The photoluminescence spectra recorded by the above band gap excitation reveal dominant transitions due to the 5D0→7F1,2,3 lines at 6004, 6211 and 6632Å for the Eu3+ and 3P0,1→3F2,3 at 6450 and 6518Å, respectively, for the Pr3+. We report on the temperature dependence of the intra-ionic emissions as well as on the lattice site location of the RE detailed angular scans through the 〈0001〉 and 〈101̄1〉 axial directions; which indicates that for Pr, complete substitutionality on the Ga sites was achieved while for Eu a Ga displaced site was found. © 2001 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/10773/6720
ISSN: 0921-4526
publisher version/DOI: http://dx.doi.org/10.1016/S0921-4526(01)00656-1
source: Physica B: Condensed Matter
appears in collectionsFIS - Artigos

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