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 Optical doping of ZnO with Tm by ion implantation
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6718

title: Optical doping of ZnO with Tm by ion implantation
authors: Rita, E.
Alves, E.
Wahl, U.
Correia, J.G.
Neves, A.J.
Soares, M.J.
Monteiro, T.
keywords: PL
RBS/Channeling
Tm doping
ZnO
Annealing
Crystal defects
Crystal lattices
Ion implantation
Photoluminescence
Rutherford backscattering spectroscopy
Semiconducting gallium
Semiconductor doping
Single crystals
Thulium
Band gap excitation
Optical activation
Zinc oxide
issue date: 2003
publisher: Elsevier
abstract: ZnO [0 0 0 1] single-crystals were implanted at room temperature with 150 keVTm+ ions at a fluence of 5 × 1015cm -2. Each sample was then subjected to one single 30min air annealing at 800°C, 950°C and 1050°C. The Tm lattice site location and defect recovery were investigated with Rutherford Backscattering/Channeling Spectroscopy. Detailed angular scans along the [0 0 0 1] direction show that 94% of the Tm ions occupy substitutional Zn sites (SZn) in the as-implanted sample. All the annealing temperatures lead to a reduction of this fraction to 30%. Also, progressive damage recovery and Tm segregation to the surface were observed, being enhanced at 1050°C. Photoluminescence (PL) studies with above band gap excitation performed on these samples revealed no luminescence on the as-implanted state. The 800°C air annealing promotes the Tm3+ optical activation and a well-defined near-infrared intraionic emission is observed. For higher annealing temperatures, in spite of no change of the Tm fraction at SZn sites, a decrease of the Tm intraionic emission was observed. These results suggest that optical activation of Tm ions is related with the defect density in their environment. © 2003 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/10773/6718
ISSN: 0921-4526
publisher version/DOI: http://dx.doi.org/10.1016/j.physb.2003.09.017
source: Physica B: Condensed Matter
appears in collectionsFIS - Artigos

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