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 Optical properties and transport in PLD-GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6680

title: Optical properties and transport in PLD-GaN
authors: Niehus, M.
Sanguino, P.
Monteiro, T.
Soares, M.J.
Pereira, E.
Vieira, M.
Koynov, S.
Schwarz, R.
keywords: Activation energy
Energy gap
Excitons
Gallium nitride
Metallorganic chemical vapor deposition
Optical properties
Photoconductivity
Photoluminescence
Stacking faults
Emission Bands
issue date: 2003
publisher: Elsevier
abstract: We present structural, optical and transport data on GaN samples grown by hybrid, two-step low temperature pulsed laser deposition. The band gap of samples with good crystallinity has been deduced from optical spectra. Large below gap band tails were observed. In samples with the lowest crystalline quality the PL spectra are quite dependent on spot laser incidence. The most intense PL lines can be attributed to excitons bounded to stacking faults. When the crystalline quality of the samples is increased the ubiquitous yellow emission band can be detected following a quenching process described by a similar activation energy to that one found in MOCVD grown samples. The samples with the highest quality present, besides the yellow band, show a large near band edge emission which peaked at 3.47 eV and could be observed up to room temperature. The large width of the NBE is attributed to effect of a wide distribution of band tail states on the excitons. Photoconductivity data supports this interpretation
URI: http://hdl.handle.net/10773/6680
ISSN: 0038-1101
publisher version/DOI: http://dx.doi.org/10.1016/S0038-1101(02)00415-X
source: Solid-State Electronics
appears in collectionsFIS - Artigos

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