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 Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6636

title: Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
authors: Cerqueira, M.F.
Stepikhova, M.
Losurdo, M.
Monteiro, T.
Soares, M.J.
Peres, M.
Neves, A.
Alves, E.
keywords: Ellipsometry
Silicon QD
issue date: 2006
publisher: MSF
abstract: Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 μm photoluminescence is discussed.
URI: http://hdl.handle.net/10773/6636
ISSN: 0255-5476
publisher version/DOI: dx.doi.org/10.4028/www.scientific.net/MSF.514-516.1116
source: Materials Science Forum
appears in collectionsFIS - Artigos

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