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 Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6632

title: Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN
authors: Seitz, R.
Gaspar, C.
Monteiro, T.
Pereira, E.
Leroux, M.
Beaumont, B.
Gibart, P.
keywords: GaN
Mid-band-gap emissions
Time resolved luminescence
Electron emission
Electron spectroscopy
Electron transitions
Energy gap
Luminescence of solids
Semiconductor doping
Time resolved spectroscopy
Semiconducting gallium compounds
issue date: 1998
publisher: Elsevier
abstract: Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. While the near-band-gap emission is due to fast transitions (with decays shorter than 10 μs) the lower energy emissions have longer components whose behaviour is discussed. © 1998 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/10773/6632
ISSN: 0022-0248
publisher version/DOI: http://dx.doi.org/10.1016/S0022-0248(98)00190-0
source: Journal of Crystal Growth
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