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 Complex formation in Mn-doped GaP samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6495

title: Complex formation in Mn-doped GaP samples
authors: Monteiro, T.
Pereira, E.
keywords: GaP
issue date: 1991
publisher: Elsevier
abstract: It is known that Mn in n-type GaP undergoes complexation upon annealing at temperatures close to 1000° C. An investigation of the optical properties of annealed Mn-doped GaP is carried out by several techniques. Photoluminescence (PL) and time-resolved spectroscopy (TRS) are combined with lifetime measurements at different temperatures. A new broad photoluminescence band peaking at 2.03 eV at low temperatures is investigated. This band has the characteristics of a bound exciton and is interpreted as due to a nearest-neighbour Mn complex with a donor
URI: http://hdl.handle.net/10773/6495
ISSN: 0169-4332
publisher version/DOI: dx.doi.org/10.1016/0169-4332(91)90175-J
source: Applied Surface Science
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