DSpace
 
  Repositório Institucional da Universidade de Aveiro > Departamento de Física > FIS - Artigos >
 Complex formation in Mn-doped GaP samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6495

title: Complex formation in Mn-doped GaP samples
authors: Monteiro, T.
Pereira, E.
keywords: GaP
Photoluminescence
issue date: 1991
publisher: Elsevier
abstract: It is known that Mn in n-type GaP undergoes complexation upon annealing at temperatures close to 1000° C. An investigation of the optical properties of annealed Mn-doped GaP is carried out by several techniques. Photoluminescence (PL) and time-resolved spectroscopy (TRS) are combined with lifetime measurements at different temperatures. A new broad photoluminescence band peaking at 2.03 eV at low temperatures is investigated. This band has the characteristics of a bound exciton and is interpreted as due to a nearest-neighbour Mn complex with a donor
URI: http://hdl.handle.net/10773/6495
ISSN: 0169-4332
publisher version/DOI: dx.doi.org/10.1016/0169-4332(91)90175-J
source: Applied Surface Science
appears in collectionsFIS - Artigos

files in this item

file description sizeformat
ASS.pdfversão pdf do editor2.57 MBAdobe PDFview/open
Restrict Access. You can Request a copy!
statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! RCAAP OpenAIRE DeGóis
ria-repositorio@ua.pt - Copyright ©   Universidade de Aveiro - RIA Statistics - Powered by MIT's DSpace software, Version 1.6.2