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 Cathodoluminescence study of GaN epitaxial layers
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6489

title: Cathodoluminescence study of GaN epitaxial layers
authors: Cremades, A.
Piqueras, J.
Xavier, C.
Monteiro, T.
Pereira, E.
Meyer, B.K.
Hofmann, D.M.
Fischer, S.
keywords: Cathodoluminescence
Photoluminescence
Scanning electron microscopy
issue date: 1996
publisher: Elsevier
abstract: GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density suggests emission mechanisms involving a deep center and donor-donor or donor-acceptor pairs. Time resolved photoluminescence (TRPL) measurements confirm the involvement of a deep center in the emission. CL images reveal that the centers responsible for this emission decorate grain boundaries. Emission bands at 2.87 eV and 1.31 eV have been also detected in the films.
URI: http://hdl.handle.net/10773/6489
ISSN: 0921-5107
publisher version/DOI: dx.doi.org/10.1016/S0921-5107(96)01712-6
source: Materials Science and Engineering B
appears in collectionsFIS - Artigos

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