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 Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6315

title: Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV
authors: Monteiro, T.
Pereira, E.
keywords: GaP
Photoluminescence
issue date: 1992
publisher: Elsevier
abstract: Broad-band emission observed in n-type Mn-doped GaP samples before and after annealing at 1000°C are studied by time resolved spectroscopy and interpreted as due to excitons bound to complexes. These complexes are rearranged by the heat treatment.
URI: http://hdl.handle.net/10773/6315
ISSN: 0022-2313
publisher version/DOI: http://dx.doi.org/10.1016/0022-2313(92)90177-B
source: Journal of Luminescence
appears in collectionsFIS - Artigos

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