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 The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin Films
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6209

title: The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin Films
authors: Stepikhova, M.V.
Cerqueira, M.F.
Losurdo, M.
Giangregorio, M.M.
Alves, E.
Monteiro, T.
Soares, M.J.
keywords: Si nanocrystals
photoluminescence
issue date: 2004
publisher: MAIK Nauka/Interperiodica
abstract: In this contribution, we present a structural and photoluminescence (PL) analysis of Er-doped nanocrystalline silicon thin films produced by rf magnetron sputtering method. We show the strong influence of the presence of nanocrystalline fraction in films on their luminescence efficiency at 1.54 μm studied on a series of specially prepared samples with different crystallinity, i.e., percentage and sizes of Si nanocrystals. A strong increase, by about two orders of magnitude, of Er-related PL intensity in these samples with lowering of the Si nanocrystal sizes from 7.9 to about 1.5 nm is observed. The results are discussed in terms of the sensitization effect of Si nanocrystals on Er ions
URI: http://hdl.handle.net/10773/6209
ISSN: 1063-7834
publisher version/DOI: dx.doi.org/10.1134/1.1641935
source: Physics of the Solid State
appears in collectionsFIS - Artigos

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