DSpace
 
  Repositório Institucional da Universidade de Aveiro > Departamento de Física > FIS - Artigos >
 Photoluminescence studies in ZnO samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6198

title: Photoluminescence studies in ZnO samples
authors: Boemare, C.
Monteiro, T.
Soares, M.J.
Guilherme, J.G.
Alves, E.
keywords: PL
RBS
TRPL
ZnO
Electric field effects
Excitons
Optoelectronic devices
Photoluminescence
Reflection
Spectroscopic analysis
Emission bands
Zinc oxide
issue date: 2001
publisher: Elsevier
abstract: The similarities between ZnO and GaN samples reveal that the semiconductor oxide is a potential material as a promising material for optoelectronic devices. In this work, we study by spectroscopic and RBS techniques the characteristics of bulk ZnO. A comparison between the energy separation of the several groups of near band edge photoluminescence emission bands and the energy separation between the free exciton resonances observed in reflectivity is made. We report on the luminescence dependence from temperature and the variation of the relative intensities of the lines. From the data, an assignment of recombination centers is discussed. © 2001 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/10773/6198
ISSN: 0921-4526
publisher version/DOI: dx.doi.org/10.1016/S0921-4526(01)00854-7
source: Physica B: Condensed Matter
appears in collectionsFIS - Artigos

files in this item

file description sizeformat
2001_Physica-B-Condensed-Matter2.pdfversão pdf do editor140.54 kBAdobe PDFview/open
Restrict Access. You can Request a copy!
statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! RCAAP OpenAIRE DeGóis
ria-repositorio@ua.pt - Copyright ©   Universidade de Aveiro - RIA Statistics - Powered by MIT's DSpace software, Version 1.6.2