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 Photoluminescence studies in ZnO samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6198

title: Photoluminescence studies in ZnO samples
authors: Boemare, C.
Monteiro, T.
Soares, M.J.
Guilherme, J.G.
Alves, E.
keywords: PL
Electric field effects
Optoelectronic devices
Spectroscopic analysis
Emission bands
Zinc oxide
issue date: 2001
publisher: Elsevier
abstract: The similarities between ZnO and GaN samples reveal that the semiconductor oxide is a potential material as a promising material for optoelectronic devices. In this work, we study by spectroscopic and RBS techniques the characteristics of bulk ZnO. A comparison between the energy separation of the several groups of near band edge photoluminescence emission bands and the energy separation between the free exciton resonances observed in reflectivity is made. We report on the luminescence dependence from temperature and the variation of the relative intensities of the lines. From the data, an assignment of recombination centers is discussed. © 2001 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/10773/6198
ISSN: 0921-4526
publisher version/DOI: dx.doi.org/10.1016/S0921-4526(01)00854-7
source: Physica B: Condensed Matter
appears in collectionsFIS - Artigos

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