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 Luminescence at 1.96 eV in n-type GaP
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6197

title: Luminescence at 1.96 eV in n-type GaP
authors: Pereira, E.
Monteiro, T.
keywords: GaP
issue date: 1992
publisher: Elsevier
abstract: In n-type GaP a luminescence band with maximum at 1.96 eV is found that does not behave like the SiGa-SiP donor-acceptor pair recombination. It is shown that the temperature dependence of intensity and peak energy is consistent with the luminescence of an exciton bound to a complex.
URI: http://hdl.handle.net/10773/6197
ISSN: 0022-2313
publisher version/DOI: dx.doi.org/10.1016/0022-2313(92)90182-9
source: Journal of Luminescence
appears in collectionsFIS - Artigos

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