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 Implantation of nanoporous GaN with Eu ions
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6168

title: Implantation of nanoporous GaN with Eu ions
authors: Magalhães, S.
Lorenz, K.
Peres, M.
Monteiro, T.
Tripathy, S.
Alves, E.
keywords: Porous GaN
Ion implantation
Optical doping
issue date: Apr-2007
publisher: Elsevier
abstract: Nanoporous GaN samples were implanted with 150 keV Eu+ ions with a fluence of 5 × 1015 cm−2. Channelling and X-ray diffraction (XRD) measurements indicate a high crystalline quality. After implantation the optical activity of the GaN is quenched by the implantation damage. The 〈0 0 0 1〉 aligned spectrum reveals broad damage distribution over the entire porous layer responsible for an expansion along the c-axis with a parameter increase of 0.3% as indicated by the XRD. Above band gap excitation photoluminescence at low temperature indicates the presence of two regions with different optical properties after annealing. We observe a transparent zone with UV and yellow–green broad emissions and a pale brown region where the UV emission is absent. In both regions the intraionic 4f6Eu3+ emissions are present. XRD and channelling confirm the good crystalline quality of the samples after the annealing and the incorporation of Eu into near substitutional Ga sites.
URI: http://hdl.handle.net/10773/6168
ISSN: 0168-583X
publisher version/DOI: dx.doi.org/10.1016/j.nimb.2007.01.027
source: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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