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 Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6165

title: Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation
authors: Monteiro, T.
Neves, A.J.
Carmo, M.C.
Soares, M.J.
Peres, M.
Alves, E.
Rita, E.
Wahl, U.
keywords: bulk ZnO
structural and optical properties
issue date: Jan-2006
publisher: Elsevier
abstract: ZnO, with its high energy bandgap of ∼3.3 eV, has been in the last years one of the most studied materials. The main driving force of the research performed in this oxide semiconductor is directly related to the ability and potentialities of ZnO for optoelectronic and spintronic applications. In the domain of optoelectronics, short wavelength light emitting devices are amongst the most important devices of compound semiconductors. Rare earth (RE) doping appears as an alternative route to photonic applications. In this work we discuss the role of defects in optical activation and structural properties of ion implanted RE doped ZnO single crystals.
URI: http://hdl.handle.net/10773/6165
ISSN: 0749-6036
publisher version/DOI: dx.doi.org/10.1016/j.spmi.2005.08.043
source: Superlattices and Microstructures
appears in collectionsFIS - Artigos

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