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 Near-band-edge slow luminescence in nominally undoped bulk ZnO
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6148

title: Near-band-edge slow luminescence in nominally undoped bulk ZnO
authors: Monteiro, T.
Neves, A.J.
Carmo, M.C.
Soares, M.J.
Peres, M.
Wang, J.
Alves, E.
Rita, E.
Wahl, U.
keywords: Zinc compounds
II-VI semiconductors
Wide band gap semiconductors
Photoluminescence
Time resolved spectra
Excitons
Impurity states
issue date: Jul-2005
publisher: AIP
abstract: We report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite spectral region. Furthermore, two donor-acceptor pair transitions at 3.22 and 3.238 eV are clearly identified in temperature-dependent time-resolved spectroscopy. These donor-acceptor pairs involve a common shallow donor at 67 meV and deep acceptor levels at 250 and 232 meV.
URI: http://hdl.handle.net/10773/6148
ISSN: 0021-8979
publisher version/DOI: link.aip.org/link/doi/10.1063/1.1946200
source: Journal of Applied Physics
appears in collectionsFIS - Artigos

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