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 The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6142

title: The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices
authors: Prabakaran, R.
Peres, M.
Monteiro, T.
Fortunato, E.
Martins, R.
Ferreira, I.
keywords: Raman scattering
Nanocrystals
Luminescence
issue date: May-2008
publisher: Elsevier
abstract: In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of ZnO films coating on PS. A systematic investigation from Raman spectroscopy suggests the formation of a good quality ZnO wurtzite structure on PS. The photoluminescence (PL) measurements on PS and ZnO coated PS shows a red, blue and UV emission bands at around ∼1.8, ∼2.78 and ∼3.2 eV. An enhancement of all PL emission bands have been achieved after ZnO films deposition on high porosity PS.
URI: http://hdl.handle.net/10773/6142
ISSN: 0022-3093
publisher version/DOI: dx.doi.org/10.1016/j.jnoncrysol.2007.09.105
source: Journal of Non-Crystalline Solids
appears in collectionsFIS - Artigos
I3N - Artigos

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