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 Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6107

title: Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
authors: Rogers, D.J.
Hosseini Teherani, F.
Ougazzaden, A.
Gautier, S.
Divay, L.
Lusson, A.
Durand, O.
Wyczisk, F.
Garry, G.
Monteiro, T.
Correira, M.R.
Peres, M.
Neves, A.
McGrouther, D.
Chapman, J.N.
Razeghi, M.
keywords: Aluminium compounds
Gallium compounds
III-V semiconductors
Nitrogen
Semiconductor thin films
Sputter etching
Vapour phase epitaxial growth
Wide band gap semiconductors
Zinc compounds
issue date: Aug-2007
publisher: AIP
abstract: Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy MOVPE . In this work, GaN was grown on ZnO/c-Al2O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice. © 2007 American Institute of Physics
URI: http://hdl.handle.net/10773/6107
ISSN: 0003-6951
publisher version/DOI: link.aip.org/link/doi/10.1063/1.2770655
source: Applied Physics Letters
appears in collectionsFIS - Artigos
I3N - Artigos

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