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|title: ||Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN|
|authors: ||Rogers, D.J.|
Hosseini Teherani, F.
|keywords: ||Aluminium compounds|
Semiconductor thin films
Vapour phase epitaxial growth
Wide band gap semiconductors
|issue date: ||Aug-2007|
|abstract: ||Continued development of GaN-based light emitting diodes is being hampered by constraints
imposed by current non-native substrates. ZnO is a promising alternative substrate but it
decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy
MOVPE . In this work, GaN was grown on ZnO/c-Al2O3 using low temperature/pressure MOVPE
with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial
growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO
underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.
© 2007 American Institute of Physics|
|publisher version/DOI: ||link.aip.org/link/doi/10.1063/1.2770655|
|source: ||Applied Physics Letters|
|appears in collections||FIS - Artigos|
I3N - Artigos
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