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 Electrical and photoelectronic properties of hexagonal GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6091

title: Electrical and photoelectronic properties of hexagonal GaN
authors: Seitz, R.
Gaspar, C.
Monteiro, T.
Pereira, L.
Pereira, E.
Schön, Q.
Heuken, M.
keywords: Activation energy
Energy gap
Optoelectronic devices
Semiconducting films
issue date: 1999
publisher: Wiley-VCH Verlag Berlin GmbH
abstract: Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and ≈2eV. The dark current and the yellow photoluminescence band show the same activation energy (42 meV) supporting therefore the model that relates the yellow band to a shallow donor to a deep acceptor transition. The photocurrent is thermally quenched with an activation energy of 77 meV.
URI: http://hdl.handle.net/10773/6091
ISSN: 0031-8965
publisher version/DOI: link.aps.org/doi/10.1103/PhysRevB.77.075103
source: Physica Status Solidi (A) Applied Research
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